Project title: Freestanding Ferroic Oxide membranes
The development of emergent ferroic(polar/magnetic) ordering via engineered interface in oxide heterostructures has been an important pathway to design novel nonvolatile memory. The major challenges lie in the low field switching of the ordering and integration of existing complex magnetic oxides into the silicon-based platform. Recent advances in freestanding oxide membranes enable stretching, bending, and twisting, which can address these integration issues. Here we are working on modulation of ferroic ordering in freestanding complex oxide membranes via stretching, bending or twisting.
Start date: 01/10/2024
End date: 31/12/2025